MICRON DDR4 SDRAM

关键字： DDR4 SDRAM

DDR4 is the newest iteration in DRAM, loaded with new features that improve reliability, speed, power, and stacking capabilities for the enterprise, micro-server, ultrathin, and tablet markets. With data rates reaching 2400 Mb/s, DDR4 increases performance up to 50% over DDR3. DDR4 also delivers a 20% reduction in voltage over DDR3—however, when DDR4’s additional power-saving features are taken into account, total overall power savings versus DDR3 can be as much as 40%.

The new boundary scan feature (also known as JTAG) enables early fault detection during testing, thereby reducing debugging time, improving system reliability, and ultimately, saving development and production costs.Improved performance—up to 50% higher than DDR3

Improved power consumption—up to 40% lower than DDR3
Higher data rates—2400 MT/s at release
Faster burst accesses
Improved data signal integrity
Higher-capacity memory subsystem, with up to 8-die stacking
Early fault detection and improved system reliability through JTAG

Part	Density	RoHS	Depth	Width	Voltage	Package	Pin Count	Clock Rate	Cycle Time
MT40A1G4HX-093	4Gb	Yes	1Gb	x4	1.2V	FBGA	78-ball	1067 MHz	0.938ns
MT40A1G4HX-107	4Gb	Yes	1Gb	x4	1.2V	FBGA	78-ball	933 MHz	1.07ns
MT40A256M16HA-093	4Gb	Yes	256Mb	x16	1.2V	FBGA	96-ball	1067 MHz	0.938ns
MT40A256M16HA-107	4Gb	Yes	256Mb	x16	1.2V	FBGA	96-ball	933 MHz	1.07ns
MT40A256M32TWB-125E M	8Gb	Yes	256Mb	x32	1.2V	TFBGA		800 MHz	1.25ns
MT40A512M8HX-093	4Gb	Yes	512Mb	x8	1.2V	FBGA	78-ball	1067 MHz	0.938ns
MT40A512M8HX-107	4Gb	Yes	512Mb	x8	1.2V	FBGA	78-ball	933 MHz	1.07ns